| PART |
Description |
Maker |
| W7G21M32SVX120BNI W7G21M32SVX90BNC W7G21M32SVX90BN |
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32）的CMOS掩模ROM2兆位Mx16 / 1Mx32）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| M29DW640D |
64 Mbit (8Mb x8 or 4Mb x16 / Multiple Bank / Page / Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| EDI7F2331MC100BNC EDI7F2331MC150BNC EDI7F2331MC90B |
1MX32 FLASH MODULE
|
White Electronic Designs Corporation
|
| EDI7F331MV EDI7F331MV150BNC EDI7F331MV90BNC EDI7F3 |
1MX32 FLASH MODULE
|
WEDC[White Electronic Designs Corporation]
|
| EDI7F2331MV |
1Mx32 FLASH MODULE
|
White Electronic Designs
|
